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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.1 (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP151A12A2MR is an N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.1 ( Vgs = 4.5V ) : Rds (on) = 0.16 ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2.5V High density mounting : SOT-23 11 PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 + 12 1 4 1 0.5 150 -55 ~ 150 Ta=25 OC UNITS V V A A A W O C C O ( note ) : When implemented on a ceramic PCB 806 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 20V , Vgs = 0V Vgs = 12V , Vds = 0V Id = 1mA , Vds = 10V Id = 0.5A , Vgs = 4.5V Id = 0.5A , Vgs = 2.5V Id = 0.5A , Vds = 10V If = 1A , Vgs = 0V 0.7 0.075 0.12 3.3 0.8 1.1 MIN TYP MAX 10 10 1.4 0.1 0.16 Ta=25C UNITS A A V S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 180 120 45 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 0.5A Vdd = 10V CONDITIONS MIN TYP 10 15 50 45 MAX Ta=25C UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS C / W 11 807 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 11 DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 808 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 809 |
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